发明名称 |
In situ etch process for insulating and conductive materials |
摘要 |
A method of etching an oxide/poly/oxide sandwich structure in which both oxide layers are anisotropically etched, and the poly layer is also isotropically etched to recess the poly from the edge of the contact walls. The oxide etch can be done using oxide to nitride etch stop technology. The process is an in situ etch, that is, a single parallel plate plasma reactor is employed.
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申请公布号 |
US5691246(A) |
申请公布日期 |
1997.11.25 |
申请号 |
US19930060902 |
申请日期 |
1993.05.13 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
BECKER, DAVID S.;BLALOCK, GUY T. |
分类号 |
H01L21/311;H01L21/3213;H01L21/768;(IPC1-7):H01L21/70 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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