发明名称 |
Integrated structure current sensing resistor for power devices particularly for overload self-protected power MOS devices |
摘要 |
In integrated structure sensing resistor for a power MOS device consists of a doped region extending from a deep body region of at least one cell of a first plurality of cells, constituting a main power device, to a deep body region of a corresponding cell of a second smaller plurality of cells constituting a current sensing device. The first plurality of cells and the second plurality of cells are formed using trench technology.
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申请公布号 |
US5691555(A) |
申请公布日期 |
1997.11.25 |
申请号 |
US19960598394 |
申请日期 |
1996.02.08 |
申请人 |
CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO |
发明人 |
ZAMBRANO, RAFFAELE;BLANCHARD, RICHARD A. |
分类号 |
H01L29/78;(IPC1-7):H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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