VPP DETECTOR OF SEMICONDUCTOR MEMORY DEVICE

摘要

A circuit for detecting pull-up level is provided to exactly detect irrelevant to variably input the pull-up voltage. The circuit comprises a pull-up transistor to control switching by the pull-up voltage and a pull-down transistor to control switching by the pull-up voltage. A voltage level of an output node(6) is decided according to the pull-up voltage(Vpp). Therefore, an output of invertor(12) is changed at the Vpp by controlling the trap level of the invertor(12). Thereby, it is possible to exactly detect irrelevant to variably input of the pull-up voltage(Vpp).