INTEGRATED POWER SWITCH STRUCTURE

摘要

PCT No. PCT/DE92/00011 Sec. 371 Date Jul. 8, 1993 Sec. 102(e) Date Jul. 8, 1993 PCT Filed Jan. 7, 1992 PCT Pub. No. WO92/12541 PCT Pub. Date Jul. 23, 1992.An integrated power switch structure comprises a lateral MOS transistor (3) and a lateral or vertical thyristor (2). The drain-source path of the lateral MOS transistor (3) is in series with the cathode-anode path of the thyristor (2). In order to ensure that the power switch structure reliably switches on and off with great dielectric strength and low switch-on resistance, at least the source electrode of the lateral MOS transistor (3) is insulated against the substrate (7) by means of a buried oxide layer (8) in accordance with the present invention.