发明名称 |
SEMICONDUCTOR DEVICE INCLUDING SILICON LADDER RESIN LAYER |
摘要 |
Disclosed herein is a semiconductor device having a multilayer interconnection structure, which is provided with a plurality of via holes having constant diameters. Patterns of a first interconnection layer are provided on a semiconductor substrate. An interlayer insulating film is provided over the semiconductor substrate, to cover the patterns of the first interconnection layer. A silicon ladder resin film is applied onto the surface of the interlayer insulating film, to flatten the same. First and second via holes are provided through the silicon ladder resin film and the interlayer insulating film, to expose first and second coupling portions provided on the surfaces of the patterns of the first interconnection layer. A second interconnection layer is provided over the semiconductor substrate, to be connected with the first and second coupling portions through the first and second via holes respectively. |
申请公布号 |
KR0124144(B1) |
申请公布日期 |
1997.11.25 |
申请号 |
KR19930008706 |
申请日期 |
1993.05.20 |
申请人 |
MITSUBISHI DENKI KK. |
发明人 |
FUJIKI, NORIAKI;HARADA, SHIGERU;ADACHI, HIROSHI;ADACHI, ETSUSHI |
分类号 |
H01L21/3205;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/3205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|