SEMICONDUCTOR DEVICE AND THE FABRICATING METHOD THEREOF

摘要

A fabrication method of high density semiconductor devices is provided to improve the degree of integration by increasing the size of capacitors. The method comprises the steps of: forming a trench isolation region(16) for defining an active region in a first substrate(10); forming a capacitor composed of a first electrode(18), a dielectric layer(20) and a second electrode(22); etching the rear of the first substrate(10) and forming a pillar; and forming a gate electrode(36) surrounding the pillar. The channel region and the bit-line contact hole(h) is arranged vertically, thereby achieving high cell area suitable for Giga-bite memory devices.