| 发明名称 |
Method for depositing a flow fill layer on an integrated circuit wafer |
| 摘要 |
An improved method for depositing the cap layer of a flow fill layer of an integrated circuit. The cap layer is deposited in at least two steps, instead of all at once.
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| 申请公布号 |
US5691247(A) |
申请公布日期 |
1997.11.25 |
| 申请号 |
US19960769853 |
申请日期 |
1996.12.19 |
| 申请人 |
TOWER SEMICONDUCTOR LTD. |
发明人 |
LAVIE, ZMIRA;ROTH, AVIAD;LEVY, JEFF;EDREI, ITZHAK |
| 分类号 |
H01L21/316;(IPC1-7):A01L21/316 |
主分类号 |
H01L21/316 |
| 代理机构 |
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