发明名称 |
Method of producing a high Tc superconducting film free of second phase defects |
摘要 |
A thin film which is substantially free of measurable surface defects due to second-phase inclusions is disclosed. The film is composed of multilayered strata of a first metal oxide interspersed with single molecular layers of a second metal oxide, where the second metal oxide is effective to absorb second-phase defects which form in the first oxide layers.
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申请公布号 |
US5691280(A) |
申请公布日期 |
1997.11.25 |
申请号 |
US19960648780 |
申请日期 |
1996.05.14 |
申请人 |
VARIAN ASSOCIATES, INC. |
发明人 |
ECKSTEIN, JAMES N.;BOZOVIC, IVAN |
分类号 |
H01L39/12;H01L39/24;(IPC1-7):H01L39/24 |
主分类号 |
H01L39/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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