Active pixel sensor cell for image sensor

摘要

The cell includes a p-type substrate (110) within which is formed an n-type trough (114). Also provided is a heavily doped n-type region (112) at a distance from the trough and to which a main voltage (Vcc) is supplied. Between the trough and the heavily doped n-region is defined a parasitic channel region (118) over which is formed an insulated gate (124). A reset voltage is applied to the gate by which the trough region is reset.