Method of manufacturing a thin semiconductor layer

摘要

Producing a thin semiconductor layer from a wafer involves: (a) implanting noble gas or hydrogen ions through a flat face (2) of the wafer at a dose causing formation of micro-cavities which weaken the wafer along a reference plane without causing wafer separation; and (b) separating the wafer into two parts, one of which forms the thin layer (6), by mechanical force application after or during heat treatment. Preferably, prior to separation, the flat wafer face (2) is attached to a support (8), by means of which the mechanical forces (preferably tensile, shear and/or bending forces) are applied, the support being of flexible material (e.g. a 'Kapton' sheet) or rigid material (e.g. an oxidised silicon wafer).