| 摘要 |
PURPOSE:To reduce the change with time of a resistance value after the current trimming of a high impurity-concentration polycrystalline silicon resistor, to enable the trimming with high accuracy of the resistor and to improve reliability by providing a current trimming process and an annealing process. CONSTITUTION:A current trimming process adjusting the resistance value of a polycrystalline silicon resistor 1 containing an impurity in high concentration by conducting the resistor 1 in current density for melting the grain boundary of the polycrystalline silicon resistor and an annealing process stabilizing the resistance value of the polycrystalline silicon resistor by thermally treating the polycrystalline silicon resistor 1 after current trimming are provided. Accordingly, the change with time of the resistance value after the current trimming of the high impurity-concentration polycrystalline silicon resistor is reduced, the trimming with high accuracy of the resistor is enabled and reliability can be improved. |
