发明名称 |
TUNNEL JUNCTION DEVICE COMPOSED OF COMPOUND OXIDE SUPERCONDUCTOR MATERIAL AND METHOD FOR FABRICATING THE SAME |
摘要 |
A tunnel junction device includes a pair of superconduction layers formed of a compound oxide superconductor material and a non-superconduction layer formed between the pair of superconduction layers. The non-superconductive material layer is formed of a compound oxide superconductor material which is substantially the same as that of the first and second superconduction layers but which is doped with a dopant of an amount sufficient for the compound oxide superconductor material to lose the superconduction property. The first superconduction layer, the non-superconductive material layer and the second superconduction layer have a continuous crystal lattice as a whole. The above mentioned tunnel junction structure is formed by continuously depositing the compound oxide superconductor material on a substrate without interrupt of deposition from a beginning of the deposition of the first superconduction layer until a termination of deposition of the second superconduction layers, and adding a dopant concurrently with deposition of the compound oxide superconductor material only at the time of forming the non-superconduction layer, so that the first superconduction layer, the non-superconduction layer and the second superconduction layer are continuously formed in the named order without interrupt of deposition of the compound oxide superconductor material.
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申请公布号 |
CA2030713(C) |
申请公布日期 |
1997.11.18 |
申请号 |
CA19902030713 |
申请日期 |
1990.11.27 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
YAZU, SHUJI;ITOZAKI, HIDEO;NAKANISHI, HIDENORI;TANAKA, SABURO |
分类号 |
H01L39/22;H01L39/24;(IPC1-7):H01L23/34 |
主分类号 |
H01L39/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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