发明名称 |
Cadmium sulfide interface layers for improving III-V semiconductor device performance and characteristics |
摘要 |
In a Schottky metal junction semiconductor device, a CdS interface layer, having a thickness of under 100 angstroms, is positioned under the Schottky barrier gate of a III-V HEMT, for reducing gate leakage, and for enabling full depletion of the conducting channel. A similar layer is positioned under the insulator of an MIS device having an InP substrate. The CdS layers are deposited from a chemical bath which merely entails a simple, safe and readily controllable additional step in the otherwise conventional manufacturing process of these devices.
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申请公布号 |
US5689125(A) |
申请公布日期 |
1997.11.18 |
申请号 |
US19950489601 |
申请日期 |
1995.06.12 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE AIR FORCE |
发明人 |
VACCARO, KENNETH;DAVIS, ANDREW;DAUPLAISE, HELEN M.;LORENZO, JOSEPH P. |
分类号 |
H01L29/49;H01L29/778;H01L31/108;(IPC1-7):H01L29/778;H01L31/032 |
主分类号 |
H01L29/49 |
代理机构 |
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