发明名称 GOLD ALLOY WIRE FOR SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To enhance a gold alloy wire in tensile strength at normal temperatures so as to protect it against disconnection caused by vibrations and shocks by a method wherein the gold alloy wire is formed of high-impurity gold and a specific amount of scandium, germanium, beryllium, calcium, and lanthanum. SOLUTION: 5 to 50ppm scandium by weight, 5 to 50ppm germanium by weight, 2 to 10ppm beryllium by weight, 2 to 10ppm calcium by weight, and 2 to 10ppm lanthanum by weight are added to high-purity gold, where the total sum of additive elements is limited to 16 to 130ppm by weight, and the rest is unavoidable impurities. Or, 10 to 30ppm scandium by weight, 10 to 40ppm germanium by weight, 3 to 8ppm beryllium by weight, 3 to 8ppm calcium by weight, and 3 to 8ppm lanthanum by weight are added to high-purity gold, where the total sum of additive elements is limited to 29 to 94ppm by weight, and the rest is unavoidable impurities. By this setup, a gold alloy wire formed of material prescribed in composition as above is enhanced in resistance to vibration fracture, so that a product equipped with the gold alloy wire can be improved in manufacturing yield and reliability.
申请公布号 JPH09298213(A) 申请公布日期 1997.11.18
申请号 JP19960134439 申请日期 1996.04.30
申请人 TATSUTA ELECTRIC WIRE & CABLE CO LTD 发明人 IDE KENZO;MORI KENJI;TOKITA MASANORI
分类号 C22C5/02;H01L21/60 主分类号 C22C5/02
代理机构 代理人
主权项
地址