| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a voltage boosting circuit and a high voltage switch capable of making the transfer efficiency of a boosted voltage maximum and capable of raising a node whose voltage is to be boosted sufficiently by synchronizing the high voltage switch and a clock driving a voltage boosting circuit. SOLUTION: This EEPROM is provided with an oscillator circuit 9 connecting plural stages of inverters in a closed loop and producing first∼fourth signalsϕi (i=1∼4) from outputs of respective inverters, a voltage boosting circuit 8 to be driven with the signalsϕi and a high voltage switch 10 selectively impressing outputs of the voltage boosting circuit 8 to memory array cells. Moreover, the switch 10 is driven with the clock of the oscillator 9 driving the circuit 8 in order to make the transfer efficiency maximum. Furthermore, the switch 10 is constituted of a first nMOSQn31 and a second nMOSQn33 whose drains are connected to the output of the circuit 8, a capacitor C30 whose one end is connected to the source of the nMOSQn31 and to whose other end a pulse signal is to be inputted and a third nMOSQn34 and the capacitor C30 is driven with the signalϕ4.</p> |
