| 摘要 |
PROBLEM TO BE SOLVED: To accurately detect the end point of a polishing process so as to efficiently flatten the surface of a film layer through the polishing process, by a method wherein a reflected light flux obtained from a first light flux and another reflected light flux obtained from a second light flux are separately detected so as to obtain the surface data of the film layer, and it is judged whether a film layer polishing process is continued or discontinued. SOLUTION: A film thickness measurement means is used, if necessary. The average thickness d (ρ) of a two-dimensional region ρ of an insulating film layer 5 is measured by the film thickness measurement means through a spectral reflectance measurement, wherein the film thickness measurement means is equipped with a unit comprises a light source and a spectrometer, a half mirror, and a photomultiplier. Monochromatic light which changes continuously in wavelength is emitted from the unit and reflected from the surface of the insulating layer 5 and an interface between the insulating film layer 5 and a silicon substrate 6. At this point, the two reflected light fluxes interfere with each other. The average thickness d (ρ) 8 of the insulating film layer 5 is obtained on the basis of an interference intensity change in the two reflected light fluxes. The measured values are stored, compared with a target thickness distribution, and properly corrected so as to carry out a polishing process efficiently. |
