| 摘要 |
PROBLEM TO BE SOLVED: To easily form patterns of high accuracy in shapes and sizes in semiconductor devices, etc., having fine patterns by providing the opposite side of first transmissible parts arranged with light shielding part patterns in-between with second transmissible parts consisting of the patterns smaller than the patterns of the first transmissible parts and having transmissibility. SOLUTION: A photomask 1 have the rectangular patterns P (pattern sizes are, for example, width L5=0.6μm and length L6=1.0μm) consisting of translucent parts 1b on the light shielding film 1a and have fine correction patterns 1c, 1d of a square shape which partly overlap on the corner parts, consist of the translucent parts in the non-overlapping parts and consist of the light shielding parts of the non-overlapping parts. The sizes of such correction patterns 1c, 1d constitute a square shape of, for example, a width L7=0.4μm. In such a case, the correction patterns 1c are so formed as to include the vertexes p1 of the rectangular patterns p and the correction patterns 1d to include the vertex p2 of P. The correction patterns 1c, 1d do not come into contact with each other and do not overlap each other. |
