SUBSTRATE HOLDING TOOL, SEMICONDUCTOR MANUFACTURE DEVICE, CRYSTAL GROWTH METHOD AND SEMICONDUCTOR MANUFACTURE METHOD

摘要

PROBLEM TO BE SOLVED: To make a crystal growth temperature constant in spite of the number of the processing times of a crystal growth process and to precisely measure the temperature of a substrate for crystal growth. SOLUTION: A substrate holder 10A is constituted of metal with the high melting point such as molybdenum. The holder has a substrate holding part 11 being an area for holding the substrate for crystal growth of a semiconductor crystal and a substrate non-holding part 12 being an area which does not hold the pertinent substrate. The upper face of the substrate non-holding part 12 is covered by a polycrystalline substrate whose lattice mismatching rate with the crystal lattice of the substrate for crystal growth is within 10%.