| 摘要 |
PROBLEM TO BE SOLVED: To convert a nitride semiconductor into a low-resistance p-type one by growing on a substrate at least an n-type GaN compd. semiconductor layer and p-type impurity-doped GaN compd. semiconductor layer by the chemical vapor phase deposition and annealing the whole thereof at a specified temp. SOLUTION: By using the metal org. compd. vapor phase deposition MOCVD, a GaN buffer layer is formed on a sapphire substrate, and GaN layer is formed thereon with doping Mg as a p-type impurity. They are annealed at 400 deg.C, pref. 700 deg.C or more in vacuum, N2 or He inert gas or their mixed gas atmosphere and may be annealed in a reaction vessel after growing the p-type impurity-doped nitride semiconductor layer or in an exclusive annealing apparatus after the wafer is taken out from the reaction vessel. Thus a low-resistance p-type nitride semiconductor is obtained. |
