发明名称 Etching method, method of producing a semiconductor device, and etchant therefor
摘要 A method of etching material as a transparent conductive film, a method of producing a semiconductor device, and an etchant therefor are disclosed. These method and etchant are simple, excellent in etching selectivity, and stable for a long time. The methods include the steps of disposing paste on material wherein the paste includes an etching solution and at least one kind of fine particles. A method of producing a semiconductor device, including the above-described etching steps is also disclosed.
申请公布号 US5688366(A) 申请公布日期 1997.11.18
申请号 US19950429039 申请日期 1995.04.26
申请人 CANON KABUSHIKI KAISHA 发明人 ICHINOSE, HIROFUMI;SHINKURA, SATOSHI;HASEBE, AKIO;MURAKAMI, TSUTOMU
分类号 H01L21/306;H01L21/321;(IPC1-7):C23F1/10 主分类号 H01L21/306
代理机构 代理人
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