发明名称 |
Etching method, method of producing a semiconductor device, and etchant therefor |
摘要 |
A method of etching material as a transparent conductive film, a method of producing a semiconductor device, and an etchant therefor are disclosed. These method and etchant are simple, excellent in etching selectivity, and stable for a long time. The methods include the steps of disposing paste on material wherein the paste includes an etching solution and at least one kind of fine particles. A method of producing a semiconductor device, including the above-described etching steps is also disclosed.
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申请公布号 |
US5688366(A) |
申请公布日期 |
1997.11.18 |
申请号 |
US19950429039 |
申请日期 |
1995.04.26 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
ICHINOSE, HIROFUMI;SHINKURA, SATOSHI;HASEBE, AKIO;MURAKAMI, TSUTOMU |
分类号 |
H01L21/306;H01L21/321;(IPC1-7):C23F1/10 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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