| 摘要 |
PROBLEM TO BE SOLVED: To reduce contamination and improve thermal resistance, thermal shock resistance, oxidation resistance and corrosion resistance to a hologenic corrosive gas by coating the surface of an aluminum nitride substrate with a dense silicon carbide film. SOLUTION: This substrate is obtained by press-molding aluminum nitride, which contains a metal element belonging to Ia-VIIa, VIII, Ib and IIb of the periodic table and a metal element such as Si, Ga and Ge in a content of 100ppm or less and a sintering auxiliary in a content of 5wt.% or less, under pressure followed by firing. The surface of this material is coated with a dense silicon carbide-based film. |
