| 摘要 |
<p>PROBLEM TO BE SOLVED: To facilitate forming a thick film by the hydrothermal synthesis, raise the voltage distortion const., and forming a fine pattern by forming a piezoelectric thin film having a specified thickness, a crystal grain size and a surface roughness on a substrate. SOLUTION: A SiO2 insulation film 201 on a single crystal Si substrate 101, a Pt lower electrode 104 is formed thereon by sputtering, a specified sol is applied, baked, calcined, preannealed, and annealed with flow of oxygen in a diffusion furnace to form a PZT (piezoelectric) seed crystal 105 on the film surface by the solgel method, and a PZT film (layer) 106 is grown by the hydrothermal reaction on the PZT seed crystal 105. Thus obtained thin film 106 has a thickness of 1-10μm, a crystal grain size of 0.05-1μm, and a surface roughness Rmax of 1μm or less and is oriented in the (100) or (111) plane.</p> |
