APPARATUS FOR PRODUCING SEMICONDUCTOR AND PRODUCTION OF SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To stably produce a high-quality epitaxial wafer when carrying out the lattice misfit epitaxial growth having a crystal structure and/or a lattice constant greatly different from those of a substrate for growing and a semiconductor single crystal thin film formed thereon as in the case of growing an AlGaInN-based thin film. SOLUTION: Radicals and/or ions produced by exciting a gas with a plasma in the first chamber are brought into contact with a substrate for growing to carry out modifying and/or cleaning and the vapor growth of a semiconductor single crystal thin film on the substrate for growing is then performed in the second chamber. The substrate for growing is moved from the first to the second chambers without being brought into contact with the air.