| 摘要 |
This invention provides a method for making a semiconductor device. The method applies an uniform thickness of an Anti-Reflection Coat (ARC) to improve the dimensional controllability of a resist pattern by sufficiently exposing a resist layer using the ARC without reduction of the throughout. A layer to be etched is formed over a portion of a substrate surface including a step portion. A first resist layer sensitive to a first exposure light is formed on the layer to be etched. The first resist layer has a film thickness equal to or less than 1.5 mu m and reduces a height of the step. The ARC material has a low reflectance relative to a second exposure light and is formed on the first resist layer with a thickness equal to or less than 0.2 mu m. A second resist layer sensitive to a second exposure light is formed on the ARC material. The second resist layer is patterned by the second exposure light. The pattern in the second resist layer is also formed on the ARC material. The first resist layer is exposed to the first exposure light using the pattern as a mask. Thereafter, the first resist layer is developed and used as a mask to etch the layer to be etched.
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