METHOD OF EVALUATING SILICON CRYSTAL

摘要

PROBLEM TO BE SOLVED: To extract structural information such as Si-Si distance having an oxygen atom bonded thereto by comparing the peak shift ratio of a far infrared absorption spectrum calculated by introducing a local distortion by the influence of impurities with a peak shift ratio by an actual experiment. SOLUTION: The data showing the relation between the peak shift ratio by calculation and the change ratio of length of Si-Si axis is preliminarily stored in the memory 3 of a computer 1. A far infrared absorption spectrum measuring device 6 measures the far infrared absorption spectra of a sample and a reference sample containing no impurity, measures the peak shift of far infrared absorption band, and outputs the result to the computer 1. The computer 1 calculates the experimental peak shift ratio. The local structure and present state of interstitial oxygen atom in silicon crystal (Si crystal) are evaluated from the peak shift ratios of the far infrared absorption spectra.