发明名称 |
Phase shift layer-containing photomask, and its production and correction |
摘要 |
The present invention relates particularly to a process for producing phase shift layer-containing photomasks, which can produce phase shift photomasks through a reduced or limited number of steps to reduce or limit the incidence of phase shifter pattern deficiencies or other defects and at lower costs as well. For instance, a photomask blank of the structure that a substrate is provided thereon with an electrically conductive layer and a light-shielding thin film in this order is used to coat a starting material for spin-on-glass uniformly on a light-shielding pattern formed thereon. A pattern is directly drawn on the coaxed-spin-on-glass layer with energy beams emanating from electron beam exposure hardware, etc., and the substrate is developed with a solvent after pattern drawing with energy beams to wash off an excessive spin-on-glass portion other than the spin-on-glass layer irradiated with the ionizing radiations. Finally, the post-development substrate is baked to form a phase shifter pattern.
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申请公布号 |
US5688617(A) |
申请公布日期 |
1997.11.18 |
申请号 |
US19960644856 |
申请日期 |
1996.05.09 |
申请人 |
DAI NIPPON PRINTING CO., LTD. |
发明人 |
MIKAMI, KOICHI;MIYASHITA, HIROYUKI;TAKAHASHI, YOICHI;FUJITA, HIROSHI;KURIHARA, MASA-AKI |
分类号 |
G03F1/00;(IPC1-7):G03F9/00 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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