发明名称 |
Method of CVD TiN barrier layer integration |
摘要 |
A method of forming a titanium nitride barrier layer is described. Semiconductor device structures are provided in and on a semiconductor substrate. An insulating layer is deposited overlying the semiconductor device structures. An opening is etched through the insulating layer to contact one of the semiconductor device structures. A titanium glue layer is deposited overlying the insulating layer and within the opening. A titanium nitride barrier layer is deposited overlying the titanium glue layer by chemical vapor deposition. A first metal layer is deposited overlying the barrier layer and filling the opening. The first metal layer is etched back leaving the first metal layer only within the opening whereby a portion of the titanium glue layer is exposed. Thereafter, the substrate is annealed to form a titanium nitride protection layer on the exposed portion of the titanium glue layer. Thereafter, the substrate is cleaned wherein the protection layer prevents oxidation of the titanium glue layer. A second metal layer is deposited overlying the first metal layer and patterned to complete the metallization in the fabrication of an integrated circuit device.
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申请公布号 |
US5688718(A) |
申请公布日期 |
1997.11.18 |
申请号 |
US19970794598 |
申请日期 |
1997.02.03 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD |
发明人 |
SHUE, SHAULIN |
分类号 |
H01L21/285;(IPC1-7):H01L21/283 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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