| 摘要 |
A semiconductor component comprising a substrate layer, a device layer and a buried layer isolating the substrate layer from the device layer is disclosed, in which at least one portion of the device layer has been implanted with a non-dopant to function as a getter centre to capture impurities. Said portion or portions of the device layer may extend in the same plane as, and adjacent to, the buried layer, or from the surface of the device layer to the buried layer. If an SOI material is used, the getter centre may be implanted from the bottom of the device before assembling the layers, allowing the use of low implantation energies. |
