| 摘要 |
PURPOSE:To obtain a permeable base transistor of a structure where both electrodes are insulated electrically from each other even when a cathode electrode and a grid electrode are formed by evaporating a metal on a substrate where a line and a space have been formed by a method wherein a silicon dioxide layer is formed on a side wall of a groove. CONSTITUTION:In a permeable base transistor composed of cathode electrodes 12 and grid electrodes 13 which are formed on a semiconductor substrate 11 where grooves have been formed, silicon dioxide layers 15 are formed on side walls of the grooves. For example, lines and spaces are formed on an n-type Si substrate 11 by a dry etching operation; after that, an SiO2 film 15 with a thickness of 500Angstrom is formed on the whole surface by a thermal oxidation operation. Then, the SiO2 in the lines and the spaces is removed by executing the dry etching operation again; the SiO2 is left only on side walls. Then, NiS2 is evaporated to be a thickness of 100Angstrom by using an MBE method; cathode electrodes 12 and gird electrodes 13 are formed simultaneously. Lastly, AuSb is evaporated on the rear of the Si substrate 11 in order to form an anode electrode 14; a permeable base transistor is completed. |
