METHOD OF MANUFACTURING BI-LAYERED FERROELECTRIC THIN FILM,申请号CA19972205189-传众专利搜索

发明名称	METHOD OF MANUFACTURING BI-LAYERED FERROELECTRIC THIN FILM
摘要	A method of forming a Bi-layered ferroelectric thin film on a substrate with good reproducibility, using a mixed composition of a Bi-containing organic compound and a metal polyalkoxide compound by at least one technique selected from the group consisting of molecular deposition such as CVD, and spincoat-sintering.
申请公布号	CA2205189(A1)	申请公布日期	1997.11.14
申请号	CA19972205189	申请日期	1997.05.13
申请人	KOJUNDO CHEMICAL LABORATORY CO., LTD.;SYMETRIX CORPORATION;MATSUSHITA ELECTRONICS CORPORATION;KOJUNDO CHEMICAL LABORATORY CO., LTD.;SYMETRIX CORPORATION;MATSUSHITA ELECTRONICS CORPORATION;KOJUNDO CHEMICAL LABORATORY CO., LTD.;SYMETRIX CORPORATION;MATSUSHITA ELECTRONICS CORPORATION	发明人	MATSUMOTO, MASAMICHI;AZUMA, MASAMICHI;HOCHIDO, YUKOH (DECEASED);OTSUKI, TATSUO;ARITA, KOJI;KADOKURA, HIDEKIMI
分类号	C23C16/40;C23C18/12;H01L21/02;H01L21/314;H01L21/316;(IPC1-7):H01G7/06	主分类号	C23C16/40
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