| 摘要 |
An improved manufacturing process and an improved device made by the process for retarding diffusion of implanted dopants during subsequent high-temperature processing. A layer of an electrically inactive species (62) is implanted well below the active dopant layers (52, 70), and the excess interstitials due to damage from the electrically inactive species layer form a retarding gradient which opposes dopant diffusion. Using this process, shallow source-drain junctions (76) can be achieved, and lateral encroachment of LDD implants (52) under the gate (55) can be minimized. |
