发明名称 |
Method of manufacturing a gate oxide |
摘要 |
<p>A method of preventing diffusion penetration of the dopant used to dope polysilicon gate material in a MOSFET is disclosed. Atomic nitrogen is introduced into the substrate prior to gate oxide growth. The nitrogen later diffuses upward into the gate oxide and blocks subsequent ion implanted gate dopants from penetrating to the substrate. <IMAGE></p> |
申请公布号 |
EP0806796(A2) |
申请公布日期 |
1997.11.12 |
申请号 |
EP19970302974 |
申请日期 |
1997.04.30 |
申请人 |
LUCENT TECHNOLOGIES INC. |
发明人 |
HILLENIUS, STEVEN JAMES;MA, YI;LIU, CHUN-TING;ROY, PRADIP KUMAR |
分类号 |
H01L29/78;H01L21/265;H01L21/28;H01L21/316;H01L29/51;(IPC1-7):H01L21/28 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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