| 摘要 |
PURPOSE:To increase the peak/trough ratio of a drain current vibration by providing a resonance tunneling barrier made of a semiconductor thin film having narrow energy gap and two thin semiconductor films each having a wide energy gap between a channel layer and a source electrode. CONSTITUTION:An I-type Al0.3Ge0.7As layer 8, an I-type GaAs layer 9 and an I-type Al0.3Ga0.7As layer 10 are grown on a semi-insulating GaAs board 7 by a MBE method. After a channel barrier wall 11 is formed by an EM method, an I-type GaAs layer 12, an I-type Al0.3Ga0.7As layer 13 are grown by a MBE method. A mesa region 14 is formed by a normal photolithography technique. An I-type Al0.3As0.7As layer 15, an I-type Ga/As layer 16, an I-type Al0.3Ga0.7As layer 17 are grown by a MBE method. A double barrier structure resonance tunneling barrier 18 made of the layers 15, 16, 17 is formed by a normal photolithography technique. After a MBE method N<+> type GaAs layer is grown, a source region 19, a gate region 20 and a drain region 21 are formed by an EB method. |
