发明名称 |
Epitaxy on a substrate |
摘要 |
<p>A substrate wafer for epitaxy of a compound semiconductor single crystal and an epitaxy using the substrate wafer are disclosed. Where the orientation off-angle from the <100> plane of an area available for device formation of a surface of the substrate wafer is theta <.>, and the growth rate on an epitaxial layer on the substrate wafer is V mu m/hr, and the growth temperature of the epitaxial layer is T K, the orientation off-angle theta <.> is given by the following expression: <MATH> where 0.1 </= V </= 10 and 853 </= T </= 1023. The substrate wafer is capable of significantly reducing the number of teardrop-like hillock defects which appear on the surface of the epitaxial layer and of increasing the smoothness of the surface of the epitaxial layer.</p> |
申请公布号 |
EP0567329(B1) |
申请公布日期 |
1997.11.12 |
申请号 |
EP19930303132 |
申请日期 |
1993.04.22 |
申请人 |
JAPAN ENERGY CORPORATION |
发明人 |
NAKAMURA, MASAHI;KATSURA, SHIGEO;HIRANO, RYUICHI;MAKINO, NOBUHITO;IKEDA, EIJI |
分类号 |
C30B25/16;C30B25/02;C30B25/18;C30B29/40;H01L21/20;H01L21/205;(IPC1-7):H01L21/20;C30B25/20 |
主分类号 |
C30B25/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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