发明名称 |
Method for fabricating defect-free compound semiconductor thin film on dielectric thin film |
摘要 |
A method for fabricating a defect-free compound semiconductor thin film on a dielectric thin film which oxidizes multi-semiconductor layers consisting of a hetero compound semiconductor thin film made of one of GaAs, InGaAs or InAs over a thin film containing a carbon impurity of a high concentration and made of AlGaAs series by an annealing at a vapor ambient, thereby rapidly growing a hetero-semiconductor thin film over a dielectric thin film made of Al2O3 with no defect.
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申请公布号 |
US5686350(A) |
申请公布日期 |
1997.11.11 |
申请号 |
US19940350022 |
申请日期 |
1994.11.29 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
LEE, BUN;YOON, MEE-YOUNG;BAEK, JONG-HYEOB |
分类号 |
C30B29/42;H01L21/20;H01L21/205;H01L21/316;H01L27/12;(IPC1-7):H01L21/20 |
主分类号 |
C30B29/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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