| 摘要 |
In a method for producing a diode, a first, strongly positively doped silicon wafer is bonded in accordance with the silicon fusion method to a second, weakly negatively doped silicon wafer, and subsequently the weakly negatively doped second silicon wafer is ground down to a predetermined thickness. A chromium layer which contains a small percentage of arsenic is used for resistive contact-making on the negatively doped second silicon wafer. In this way, a diode is obtained which has a small forward voltage in conjunction with a precise breakdown voltage.
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