发明名称 Semiconductor device
摘要 A semiconductor device includes a nonvolatile memory cell and a current detecting type sense amplifier for detecting a current flowing through a data line into the memory cell. The semiconductor device is further provided with an element for outputting a first voltage detecting signal when a detected supply voltage exceeds a set value and outputting a second voltage detecting signal when the detected supply voltage does not exceed the set value. The sense amplifier includes an element for switching a dependent characteristic of a level sensing current upon the supply voltage to be higher in response to the second voltage detecting signal that in response to the first voltage detecting signal. Thus, error reading of a data from the memory cell, which can be otherwise caused under application of a low supply voltage, can be avoided.
申请公布号 US5687126(A) 申请公布日期 1997.11.11
申请号 US19960697507 申请日期 1996.08.26
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 HIRANO, HIROSHIGE;HONDA, TOSHIYUKI
分类号 G11C5/14;G11C7/06;G11C16/26;(IPC1-7):G11C7/06 主分类号 G11C5/14
代理机构 代理人
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