| 摘要 |
An improved structure and method which can decrease contact resistance are disclosed. Contact holes are formed on a semiconductor substrate(20) by etching an insulating layer(21) and a diffusion region(23) is formed in the exposed substrate(20) by ion-implanting. A barrier metal(27) is deposited in the contact hole. A metal of Ru is used as the barrier metal(27). By annealing of the barrier metal(27) of Ru, a RuSi2 layer(26) and a RuO2 layer(30) are formed at the contact region. By using the RuSi2 layer(26) and the RuO2 layer(30) as silicide material and conductive oxide, it is possible to decrease the contact resistance.
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