发明名称 MATERIAL FOR METALLIC SUBSTRATE FOR SEMICONDUCTOR PACKAGING
摘要 <p>PROBLEM TO BE SOLVED: To improve strength and thermal conductivity by using a copper alloy material containing specific elements in specific weight ratio as a material for metallic substrate for semiconductor package. SOLUTION: A material for metallic substrate for plastic package in which semiconductor chips bonded to the metallic substrate are sealed with thermosetting resin is composed of a copper alloy excellent in thermal conductivity and strength, having a composition which consists of, by weight, 1-4.8% Ni, 0.2-1.4% Si, 0.001-2%, in total, of one or more elements among Mg, Zn, Sn, Fe, Ti, Zr, Cr, Al, Mn, and Be, and the balance Cu with inevitable impurities and in which the concentration ratio of Ni to Si is regulated to 2-8. By this method, the material for metallic substrate for semiconductor packaging can be produced.</p>
申请公布号 JPH09291325(A) 申请公布日期 1997.11.11
申请号 JP19960107214 申请日期 1996.04.26
申请人 NIKKO KINZOKU KK 发明人 HATANO TAKATSUGU;MIYAKE JUNJI
分类号 C22C9/06;H01L23/14;H01L23/34;(IPC1-7):C22C9/06 主分类号 C22C9/06
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