发明名称 |
Electrically programmable memory cell |
摘要 |
An electrically programmable cell comprises a substrate of the first conductivity type having a channel region, a control gate on a first insulating layer above the channel region, a source region and a drain region of a second conductivity type, on both sides of the channel region, at least the drain region including a low-doped region adjacent to the channel, a floating gate on a second insulating layer above at least a portion of said low-doped region. The thickness of the second insulating layer is lower than the thickness of the first insulating layer and is low enough for having charge transfers through tunnel effect.
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申请公布号 |
US5687113(A) |
申请公布日期 |
1997.11.11 |
申请号 |
US19950413206 |
申请日期 |
1995.03.28 |
申请人 |
SGS-THOMSON MICROELECTRONICS S.A. |
发明人 |
PAPADAS, CONSTANTIN;GUILLAUMOT, BERNARD |
分类号 |
H01L21/8247;G11C11/56;H01L21/28;H01L21/336;H01L29/423;H01L29/788;H01L29/792;(IPC1-7):G11C13/00 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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