发明名称 Electrically programmable memory cell
摘要 An electrically programmable cell comprises a substrate of the first conductivity type having a channel region, a control gate on a first insulating layer above the channel region, a source region and a drain region of a second conductivity type, on both sides of the channel region, at least the drain region including a low-doped region adjacent to the channel, a floating gate on a second insulating layer above at least a portion of said low-doped region. The thickness of the second insulating layer is lower than the thickness of the first insulating layer and is low enough for having charge transfers through tunnel effect.
申请公布号 US5687113(A) 申请公布日期 1997.11.11
申请号 US19950413206 申请日期 1995.03.28
申请人 SGS-THOMSON MICROELECTRONICS S.A. 发明人 PAPADAS, CONSTANTIN;GUILLAUMOT, BERNARD
分类号 H01L21/8247;G11C11/56;H01L21/28;H01L21/336;H01L29/423;H01L29/788;H01L29/792;(IPC1-7):G11C13/00 主分类号 H01L21/8247
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