发明名称 |
Production worthy interconnect process for deep sub-half micrometer back-end-of-line technology |
摘要 |
The present invention is directed to improving the throughput of the process for fabricating multilayer interconnects. Tungsten plugs, formed in contact/via openings etched in an interlayer dielectric, have been widely used in industry to form interconnection between different metal layers. An adhesion layer comprising a Ti/TiN stack is typically employed to support the adhesion of the tungsten plug in the contact/via openings. The present invention is directed to a process involving the formation of a Ti/TiN landing pad at the base of contact/via openings prior to the deposition of the interlayer dielectric. The process of the present invention enables the removal of the Ti under-layer and the reduction of the TiN thickness in the Ti/TiN stack. The throughput of the process for fabricating multilayer interconnects is thus greatly improved while the integrity of the devices are maintained.
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申请公布号 |
US5686761(A) |
申请公布日期 |
1997.11.11 |
申请号 |
US19960608913 |
申请日期 |
1996.02.29 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
HUANG, RICHARD J.;WOO, CHRISTY M.-C. |
分类号 |
H01L21/768;H01L23/485;H01L23/522;H01L29/45;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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