| 摘要 |
PROBLEM TO BE SOLVED: To evaluate the size and position of a beam quantitatively by a method wherein a resist where a pattern is drawn is developed for a shorter time than an optimal development time, and then the height distribution of the resist is measured by scanning with a scanning probe microscope. SOLUTION: An inclination (gain) of a line is slightly changed, a required pattern is drawn on a low-contrast positive-type resist, and the positive-type resist is developed for a shorter time than usual so as not to be completely dissolved. Thereafter, the resist is scanned by a scanning probe microscope. A gain is gradually changed little by little (Δa) as shown in Fig. a to e, and the resist is scanned the same as above, and a height change is plotted to a gain change. A dimensional error of a beam denotes an error in gain and offset and is quantitatively obtained by measuring the height distribution of the resist by the scanning probe microscope.
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