发明名称 |
Dielectric material and process to create same |
摘要 |
An embodiment of the present invention describes a method for forming a dielectric material for a storage capacitor during fabrication of a semiconductor memory device, by: cleaning impurities from the surface of a conductive plate of the storage capacitor; forming a nitride film over the conductive plate's cleaned surface; forming a metal silicide film over the nitride film; and oxidizing the metal silicide film by rapid thermal oxide (RTO) processing. A resulting structure is a capacitor having a dielectric material that is an oxidized metal silicide film.
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申请公布号 |
US5686748(A) |
申请公布日期 |
1997.11.11 |
申请号 |
US19950395933 |
申请日期 |
1995.02.27 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
THAKUR, RANDHIR P.S.;SANDHU, GURTEJ S. |
分类号 |
H01L21/02;H01L21/8242;(IPC1-7):H01L27/108 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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