| 摘要 |
PROBLEM TO BE SOLVED: To grow the crystal of high quality having less difects, and to form a semiconductor light emitting element with which a green or blue light can be emitted by a II-VI compound semiconductor. SOLUTION: In this MBE method (molecular beam epitaxial growing method) with which crystal of compound semiconductor, containing the first element (II group) and the second element (VI group), is grown on a substrate 21 by irradiating a particle beam from a particle beam source cell 13, the beam quantity of the particle beam of the first element and the second element is set at 1×10<14> cm<-2> /sec<-1> or lower. As the first element, at least one element is selected from the group of zinc, magnesium, beryllium, cadmium and mercury, and as the second element, at least one element is selected from the group of oxygen, sulfur, selenium and tellurium. The temperature of the substrate 21 is set at 280 deg.C. The growth of two-dimensional nuclei on the crystal growth surface is suppressed by decreasing the beam quantity of the particle beam of the first and the second elements and by lagging the growth speed of crystal when compared with the conventional one. |
