| 摘要 |
PROBLEM TO BE SOLVED: To obtain high quality crystal having less defects even when crystal is grown at a high temperature, and also to obtain a high quality semiconductor light emitting element with which a green or blue light can be emitted by a II-VI compound semiconductor. SOLUTION: In an MBE(molecular beam epitaxial growth) method with which a compound semiconductor layer is formed by growing crystal of compound semiconductor, containing the first element (II-group) and the second element (VI-group), on a substrate 21 by projecting a particle beam from a particle beam source cell 13, the beam quantity of either of the first element particle beam and the second element particle beam is set five times or more as much as that of the other beam quantity. As the first element, at least a kind selected from the group of zinc, magnesium, beryllium, cadmium and mercury and on the other hand, as the second element, at least a kind is selected from the group of oxygen, sulfur, selenium and tellurium. The surface of crystal growth is covered by the first element or the second element by sharply increasing the beam quantity of one side from the other beam quantity, and the separation of the atoms or the molecule which is taken in the surface of crystal growth is decreased. |
