RESIST PATTERN FORMING METHOD

摘要

PROBLEM TO BE SOLVED: To exactly form a pattern of <=0.25μm width by using a negative resist. SOLUTION: A resist 2 is applied through an antireflection film on a silicon substrate 1. The resist is irradiated with 248nm wavelength by using a Levenson mask and a reduction stepper to transfer a pattern of about 0.18μmL/S on the resist 2. Then the resist is developed with a 0.13N-TMAH developer. The formed resist pattern is observed by using an electron microscope to evaluate the dependence of the formation of a microbridge 3 on the exposure, thereby determining the exposure energy EM with which the microbridge 3 is formed.