| 摘要 |
A thin film transistor includes: an insulating film having a surface; a semiconductor film formed on the surface of the insulating film; a source electrode and a drain electrode which are in contact with the semiconductor film; and a gate electrode which is electrically insulated from the semiconductor film. In the thin film transistor, a portion of the semiconductor film at distances of less than 500 angstroms from the surface of the insulating film contains at least silicon including a microcrystalline structure having a conductivity of 5x10-9 S/cm or more. Also, a method for fabricating such a thin film transistor is disclosed. The method includes a step of forming a semiconductor film including a silicon layer having a microcrystalline structure by repeatedly performing the following steps (1) and (2): (1) forming a silicon layer on an insulating film by decomposing a material gas including Si which is introduced into a reaction chamber of a plasma chemical vapor deposition apparatus; and (2) microcrystallizing the silicon layer by introducing the hydrogen gas into the chamber to perform a hydrogen plasma treatment for the silicon layer.
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