Reference voltage generation circuit having compensation function for variations of temperature and supply voltage

摘要

A reference voltage generation circuit for a semiconductor memory device comprising a reference voltage generator for generating first and second reference voltages, the first and second reference voltages having the opposite response characteristics with respect to a variation in a temperature or a supply voltage, a start-up circuit for determining an initial condition of the reference voltage generator in response to the supply voltage to stabilize the operation of the reference voltage generator, and a voltage amplifier for compensating a target reference voltage for the temperature variation in response to the first and second reference voltages from the reference voltage generator so that the target reference voltage can always be constant in level. The first reference voltage has a positive response characteristic with respect to the temperature and the supply voltage and the second reference voltage has a negative response characteristic with respect to the temperature and the supply voltage.