| 发明名称 |
Method of making thin film transistor |
| 摘要 |
A thin film transistor comprises a gate electrode, an insulating layer and a semiconductor layer formed and laminated on an insulating substrate, said insulating layer and said semiconductor layer having the same planar pattern.
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| 申请公布号 |
US5686326(A) |
申请公布日期 |
1997.11.11 |
| 申请号 |
US19950473989 |
申请日期 |
1995.06.07 |
| 申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
KITAHARA, NOBUKO;KANEKO, TETSUYA;ENOMOTO, TAKASHI |
| 分类号 |
G02F1/1368;H01L21/336;H01L21/77;H01L21/84;H01L29/786;(IPC1-7):H01L21/84;H01L21/265 |
主分类号 |
G02F1/1368 |
| 代理机构 |
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代理人 |
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