| 摘要 |
A manufacturing method for a contact hall of a semiconductor device comprises a first through third steps. The first step is to form a bit line on a substrate with a first polysilicon film and sequentially form a first internal insulation film, a second polysilicon film pattern, an dielectric film, a third polysilicon film pattern, a second internal insulation film and a nitride film on the substrate and then, form a first contact mask on the substrate. The second step is to form a nitride film pattern by etching the nitride film on the first contact mask and by removing the first contact mask and then, form a second contact mask on which an insulation film of a predetermined thickness is formed on the overall area of the substrate. The third step is to form the contact hall by sequentially etching the insulation film, the nitride film pattern, the second internal insulation film and the first internal insulation film using the second contact mask and by removing the second contact mask.
|
